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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C IXFJ 32N50Q VDSS ID(cont) RDS(on) trr = 500 = 32 = 0.15 < 250 V A W ns Maximum Ratings 500 500 20 30 32 128 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 300 V V V V A A A J mJ V/ns W C C C C Features * Low profile, high power package * Long creep and strike distances * Easy up-grade path for TO-220 designs * Low RDS (on) low Qg process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications G = Gate, S = Source, D = Drain, TAB = Drain G D S e (TAB) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 100 1 0.15 V V nA mA mA W * * * * * * * * VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages * High power, low profile package * Space savings * High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 98579B (5/31/00) (c) 2000 IXYS All rights reserved 1-4 IXFJ 32N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 28 3950 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 210 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 W (External) 42 75 20 153 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 26 85 0.35 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. TO-268 Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) Inches Min Max .193 .106 .045 .075 .016 .057 .201 .114 .057 .083 .026 .063 Millimeters Min Max 4.90 2.70 1.15 1.90 .040 1.45 5.10 2.90 1.45 2.10 .065 1.60 A A1 b b2 C C2 D D1 E E1 e H L L1 L2 Source-Drain Diode Symbol IS ISM VSD t rr Q rr IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 128 1.5 250 A A V ns mC A .543 .551 .488 .500 .624 .632 .524 .535 .215 BSC 1.365 .780 .079 .039 .800 .091 .045 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15 1.395 34.67 35.43 IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V 0.75 7.5 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFJ 32N50Q Figure 1. Output Characteristics at 25OC 80 70 60 T J = 25 O C V GS =10V 9V 8V 7V 6V Figure 2. Output Characteristics at 125OC 50 T J = 125 OC V GS = 9V 8V 7V 6V 40 ID - Amperes 50 40 30 20 10 0 ID - Amperes 30 5V 20 10 4V 5V 0 4 8 12 16 20 0 0 4 8 12 16 20 V DS - Volts V DS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.8 V GS = 10V Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 V GS = 10V RDS(ON) - Normalized Tj=125 0 C RDS(ON) - Normalized 2.4 2.0 1.6 2.4 ID = 32A 2.0 1.6 1.2 0.8 25 ID = 16A Tj=25 0 C 1.2 0.8 0 10 20 30 40 50 60 50 75 100 125 150 ID - Amperes T J - Degrees C Figure 5. Drain Current vs. Case Temperature 40 32 Figure 6. Admittance Curves 50 40 ID - Amperes 24 16 8 0 ID - Amperes 30 20 10 0 TJ = 125 oC T J = 25 oC -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 T C - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFJ 32N50Q Figure 7. Gate Charge 14 12 10 Vds=300V ID=16A IG=10mA 10000 Figure 8. Capacitance Curves Ciss F = 1MHz Capacitance - pF VGS - Volts 8 6 4 2 0 0 50 100 150 200 250 Coss 1000 Crss 100 0 5 10 15 20 25 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V 80 ID - Amperes 60 40 20 TJ=25OC TJ=125OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.40 0.20 R(th)JC - K/W 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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